Raman Spectral Measuring of the Growth Rate of Individual Single-Walled Carbon Nanotubes

High Resolution Image Download MS PowerPoint Slide We report, herein, a rational approach to measure the growth rate of individual SWNTs. Intramolecular junctions could be produced controllably by temperature-mediated chemical vapor deposition (CVD) and used as a Raman-identifiable mark to confirm the starting and finishing position of a SWNT. Thus, the growth rate of SWNTs could be calculated by ν = L CNT / t, where ν is the growth rate, L is the length of the segment, and t is its growth time. The results show that the growth rates of SWNTs growing at 950 °C are higher than those at 900 °C, and the growth rate at 950 or 900 °C decreases with the passage of time. We believe this approach provides an easy way to measure the growth rate of an individual SWNT and that it is a good starting point to study the growth behavior of SWNTs and for constructing SWNT-based device.