Answers are grounded in this paper and cite their sources.
The dynamical relaxations of photogenerated hot carriers in the X valley of Si have been studied using time-resolved two-photon photoemission spectroscopy. Intravalley scattering is completed within 100 fs to form a quasiequilibrated electron distribution near the conduction-band minimum, while maintaining about half the excess energy given to hot electrons. The energy relaxation follows the scattering with a 240-fs time constant that is independent of the excess energy.
No takes yet. Share an insight, caveat, or question.
Ichibayashi et al. (2009) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: