A simple technique, using a single-grating holographic exposure associated with localized selective etching steps, has been developed for multiwavelength device fabrication. Four-wavelength DBR laser arrays with a 5 nm Bragg wavelength spacing have been fabricated for wavelength division multiplexing (WDM) applications with this method. These devices exhibit uniformly low-threshold currents (10-15 mA), high-output powers (15 mW) and wide tunabilities (12 nm), leading to an overall accessible wavelength domain of 28 nm for the array.
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Delorme et al. (1996) studied this question.
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