We describe the output performances of the 1.34-μm 4 F 3/2 → 4 I 13/2 transition in Nd-doped vanadates under in-band pumping with diode lasers at the 0.88-μm wavelength, directly into the 4 F 3/2 emitting level. An end-pumped Nd:YVO 4 crystal yielded 3.4 W of continuous-wave (CW) output power for 9.3 W of absorbed pump power. The slope efficiency with respect to the absorbed pump power was 0.43. To the best of our knowledge this is the first demonstration of such a laser system. Comparative results obtained for the pump with diode laser at 0.81 μm, into the highly-absorbing 4 F 5/2 level, are given in order to prove the advantages of the in-band pumping.
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Pavel et al. (2008) studied this question.
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