Answers are grounded in this paper and cite their sources.
In GaP:N (Zn,Te) light-emitting diodes extrinsic photoconductivity and infrared to visible up-conversion have been investigated by short laser pulses at 10-μm wavelength. A time constant of the order of 1 ns was observed indicating that free infrared excited hole to bound donor recombination yields the fast response.
No takes yet. Share an insight, caveat, or question.
Moser et al. (1984) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: