Rare-earth-doped films prepared by plasma-enhanced chemical vapour deposition

Rare-earth-doped thin films were made by plasma-enhanced chemical vapour deposition using a complex containing chelating ligands and tetraethoxysilane. By this means of deposition, the film was successfully doped with terbium or erbium and the luminescence properties were investigated. In the case of -doped films, strong luminescence peaks from the level were observed during excitation by a KrF excimer laser. Upon thermal treatment at 800 or , luminescence peaks from the level appear. Under DC voltages, electroluminescence from the level was also observed.