An analysis for the infrared absorption by free carriers in n -type InAs is carried out on the basis of the previous theory developed for n -type InSb, in order to investigate the scattering mechanism. The magnitude of the deformation potential constant E 1 is found to be 10 eV , and it is found that the contribution from acoustical phonons is not important for all samples of Dixon. The impurity concentration is found to be N imp =11 N e for the sample A of the smallest carrier concentration: N e =2.8×10 16 cm -3 , and to be N imp = N e for the other samples. Optical phonons make the most important contribution for samples of relatively low carrier concentrations except the sample A , in which the contribution from impurities is comparable to the one from optical phonons. The presence of an unknown scatterer in the sample A is suggested and a discussion for this is given. A discussion on the screened Coulomb potential used in the calculation of the impurity scattering also is given.
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Haga et al. (1964) studied this question.
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