An ultrasensitive visible-light transistor is fabricated by applying one-step solution-processed 2D perovskite (C6H5C2H4NH3)2SnI4 film with high crystallinity as the channel layer. The phototransistor shows high photoresponsivity over 104 A W–1 to very week visible-light signals because of the inorganic charge-carrying sheets extending in the direction of carrier transport in the field-effect transistor.
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Chen et al. (2016) studied this question.
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