A study of the structure factors in rutile-type SnO2 by high-energy electron diffraction

The structure factors for low-order reflections of rutile-type SnO2 have been studied by high-energy electron diffraction. A systematic critical-voltage effect on 220 in 110 systematic reflections, a nonsystematic critical-voltage effect on 1 50 at the [513] zone axis, a nonsystematic critical-voltage effect on the 002 reflection at the [100] zone axis and a [113]-zone-axis critical-voltage effect were observed within the accelerating-voltage range of a 200 kV electron microscope. Analysis of these critical-voltage effects gave experimental values for the structure factors between the theoretical values obtained for the Sn2+O21− and Sn4+O22− states for low-order reflections like 110 and 011, whereas a structure-factor value between the theoretical values for the neutral SnO2 and Sn2+O21− states was found for the 121 reflection.