The authors observed a negative differential resistance (NDR) in the PtIr/ZnO ribbon/sexithiophen hybrid double diodes consisting of the back-to-back Schottky and p-n junction diodes. The NDR phenomenon was found to become more and more obvious as the loading forces increased. The origin of the NDR was discussed in terms of the energy band diagram of the heterostructure, and then it was suggested to be attributed to the current-induced breakdown instead of electron resonant tunneling through the structure.
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Yang et al. (2009) studied this question.
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