Ultrathin Bi2 S3 nanosheets with thicknesses down to 2.2 nm are fabricated. The resultant ultrathin Bi2 S3 -based photoconductor shows high sensitivity to visible-near infrared light from 405 to 780 nm with a high external photoresponsivity up to 4.4 A W(-1) , high detectivity of ≈10(11) Jones, relatively fast response time of ≈10 μs, and high flexibility and durability.
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Chen et al. (2015) studied this question.
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