We have demonstrated wavelength conversion in the 1.5 μm regime using the near band gap nonlinearity of semiconductor quantum wells. In a 7.5 mm long passive InGaAsP/InP single quantum well waveguide, a wavelength shift of 20 nm has been obtained with −11 dB conversion efficiency using picosecond pulses. We confirmed the ultrafast nature of the nonlinearity by measuring the conversion efficiency as a function of the frequency shift. An order of magnitude increase in the value of n2 close to the band gap is observed compared with the off-resonance value.
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Darwish et al. (1996) studied this question.