Barium lead zirconate titanate (or (Ba, Pb)(Zr, Ti)O 3 , BPZT) thin films have been successfully fabricated from a stoichiometric target by rf-magnetron sputtering. The dielectric properties of these films were investigated. They were found to have good properties for LSI capacitor applications, e.g. , high dielectric constant (ε≈400), low temperature coefficient, low leakage current, and low crystallization temperature (550°C).
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Torii et al. (1992) studied this question.
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