The effect of a compositionally graded buffer layer (CGBL) in AlGaAs laser diodes grown by molecular beam epitaxy is presented. The threshold current and the differential quantum efficiency are improved by a factor of ∼2. The lifetime is markedly improved by using a CGBL and it is comparable to that of lasers grown by liquid phase epitaxy.
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Hayakawa et al. (1986) studied this question.
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