Influence of the Homobuffer Layer on the Morphology, Microstructure, and Hardness of Al/Si(111) Films

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The results of complementary studies of Al films grown by magnetron sputtering at room temperature are presented. The films were obtained on standard Si(111) substrates without and with a ∼20 nm aluminum (homobuffer) layer preliminarily grown on their surface at 400°C. The interdependence of the morphology, microstructure, and hardness of Al films on the state of the substrate surface was studied by the HRXRR, XRD, SEM, EDS, AFM, and Nano Indenter (ASTM) methods. It is shown that the formation of homobuffer layers on the substrate surface makes it possible to control the structural and mechanical properties of thin aluminum films.