Band Structure of Ga1−xInxAs

The band structure of Ga 1− x In x As is calculated in the virtual crystal approximation using the empirical pseudopotential method. A simple model is proposed and tested to consider the change of the screening due to alloying accounting for the nonlinear relationship between bare and effective ion potentials. The bowing parameters found in this manner are smaller than the experimental ones and disorder effects must be included to achieve agreement between theory and experiment.