Growth and characterization of high-density mats of single-walled carbon nanotubes for interconnects

We grow high-density, aligned single wall carbon nanotube mats for use as interconnects in integrated circuits by remote plasma chemical vapor deposition from a Fe–Al2O3 thin film catalyst. We carry out extensive Raman characterization of the resulting mats, and find that this catalyst system gives rise to a broad range of nanotube diameters, with no preferential selectivity of semiconducting tubes, but with at least 1∕3 of metallic tubes.