Low-pressure chemical vapor deposition polysilicon samples doped with B, P, and As were implanted with H+2 and subsequently annealed at different temperatures in the range from 100 to 1000 °C. The observed evolution of resistivity suggests that hydrogen ionizes the dopant atoms which have segregated to grain boundaries and reactivates them from the electrical viewpoint.
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E. Puppin (1987) studied this question.