A study of the effect of heat treatment on the photoluminescence intensity and broad area laser threshold current density of InGaAsP double heterostructure (DH) laser material is described. This heat treatment cycle is similar to the one an etched InGaAsP DH is subject to prior to regrowth of a buried heterostructure laser. A measurable decrease in the photoluminescence intensity of the active region for most samples, and an increase of the average broad area laser threshold of 5 to 25% on all samples were detected following the heat treatment. These degraded electro-optical properties are explained by broadening of the InP/InGaAsP interfaces.
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Besomi et al. (1984) studied this question.
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