Engineering topological phases in transition-metal-doped penta-hexa-graphene: towards spintronics applications

= 1) and a W-shaped band, with band gaps of 13.00 meV and 74.80 meV, respectively. Remarkably, pairs of gapless edge states can be observed. Moreover, we demonstrate that although the PH-CX structure is robust against external strain, both the band gap and topology can be effectively tuned. Based on the band analysis, we identify that the Rashba effect is observed even under tensile strain of up to 10%. The presented results not only greatly extend the design concept of doping to form two-dimensional topological materials but also provide potential applications in field-effect transistors (FETs) and other electronic devices.