In measurements of low contact resistances in planar geometries, the current density through the contact can be inhomogeneous. If this inhomogeneity is neglected, serious systematic errors can occur when calculating the specific contact resistivity. In this work, the transmission line model, commonly used in semiconductor technology, is applied to account for the inhomogeneous current density in low ohmic contacts between gold or silver and YBa 2 Cu 3 O 7 thin films. To evaluate the influence of preparation parameters, several fabrication techniques and different kinds of YBa 2 Cu 3 O 7 thin films have been used to form the metal-YBa 2 Cu 3 O 7 interface. Contact resistivities as low as 1*10 -9 Omega cm 2 have been obtained.
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Dreuth et al. (1993) studied this question.
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