High-quality Nb/Al, Alox/Nb Josephson tunnel junctions using double-oxide layers as barriers have been fabricated. The critical current density is controlled by the thickness of the second Al layer. This layer has to be oxidized completely through in order to obtain high-quality junctions. Typically, gap voltages of 2.8–3.0 mV and Vm up to 70 mV at 4.2 K were obtained.
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Houwman et al. (1990) studied this question.
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