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August 1, 1987Japanese Journal of Applied Physics

Dynamic Switching Characteristics of Photoluminescence by an Electric Field in AlGaAs Quantum Well Structures

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Authors

IOIchiro OguraNippon Dental UniversityMYMasamichi YamanishiHamamatsu Photonics (Japan)YKYasuo KanHiroshima University

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Ogura et al. (1987) studied this question.

synapsesocial.com/papers/6a71a40c84cc45bb7bdffc6ehttps://doi.org/10.1143/jjap.26.l1313
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Also Consider

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  3. 3Lifetime Enhancement of Two-Dimensional Excitons by the Quantum-Confined Stark Effect1985 · 203 citations
  4. 4AlGaAs/GaAs Lateral Current Injection (LCI)-MQW Laser Using Impurity-Induced Disordering1987 · 28 citations
  5. 5Quantum Mechanical Size Effect Modulation Light Sources– A New Field Effect Semiconductor Laser or Light Emitting Device1983 · 82 citations