The de Haas-van Alphen effect in n-InSb and n-InAs

A vibrating sample magnetometer was used to study the de Haas-van Alphen effect in degenerate n-type InSb samples with carrier concentration in the range 6*10 21 to 2*10 23 m -3 , and in two degenerate n-type InAs samples with carrier concentrations 4*10 22 and 4.5*10 23 m -3 . The carrier scattering lifetime was obtained for all the samples and is compared with a Born approximation calculation of the scattering by ionized impurities. Measurements were made in a number of the samples of the carrier cyclotron mass, which are compared with the band structure, and of the phase and amplitude of the oscillations, which are compared with the Lifshitz-Kosevich theoretical formula.