High Temperature Performance of Enhanced Endurance Hydrogen Terminated Transparent Polycrystalline Diamond FET

This letter reports on the high voltage operations and high temperature operations of the transparent polycrystalline diamond field-effect transistor (TPD-FET). The devices were fabricated with a wide range of wide gate-drain lengths (LGD) and a thick Al2O3passivation layer of 400 nm. Voltage breakdowns of more than 1000 V have been observed in high voltage measurements. The temperature dependence and performance of the devices at RT to 673 K were also shown. As the temperature was varied, the maximum drain currents (I_D max) for differentLGDdevices increased significantly from 33.8 mA/mm – 72.8 mA$/$mm to 86.0 mA/mm - 116.4 mA$/$mm in terms of absolute values. The findings demonstrate the advantages and potential of diamond-based devices in high temperature conditions.