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GexSi1−x films are grown on Si by molecular beam epitaxy and analyzed by Nomarski optical interference microscopy, Rutherford ion backscattering and channeling, x-ray diffraction, and transmission electron microscopy. The full range of alloy compositions will grow smoothly on silicon. GexSi1−x films with x≤0.5 can be grown free of dislocations by means of strained-layer epitaxy where lattice mismatch is accommodated by tetragonal strain. Critical thickness and composition values are tabulated for strained-layer growth. Multiple strained layers are combined to form a GexSi1−x/Si strained-layer superlattice.
Bean et al. (1984) studied this question.