The photoelectromagnetic (PEM) response of high-purity single-crystal n-type InSb has been measured over the temperature range 80-300^∘{}K. A comparison of the data with the results of a theoretical treatment of the PEM effect, generalized to include bulk generation at arbitrary magnetic field, gives values for the surface-recombination velocity on this material both as a function of temperature and of surface preparation. The results also include the first reported observation of a negative PEM response due to the diffusion of carriers into recombination sites at the illuminated sample surface.
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D. L. Lile (1973) studied this question.
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