In this work, we report about the analysis of structural, physical, and gas-sensing properties of a new sensing material made by mixing In 2 O 3 and SeO 2 . The In 2 O 3 /SeO 2 thin films have been obtained by thermal evaporation of In:Se in a 2:1 ratio and subsequent thermal annealing in an oxygen flow. In order to investigate the structure and the morphology of the films obtained, high-resolution transmission electron microscopy, small-area electron diffraction, and digital image processing were performed on thermally annealed films. The Hall effect and resistivity measurements of such films have been carefully analysed. In addition, In 2 O 3 /SeO 2 mixed oxide films were tested in a controlled atmosphere and the electrical conductance changes were measured as a function of temperature. The sensing behaviour of such films has been analysed according to an adsorption kinetic model, which related the conductivity variation to gas concentrations, time exposure, and working temperature.
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Manno et al. (2001) studied this question.
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