Electron Paramagnetic Resonance (EPR) of Phosphorus in Silicon‐Rich Silicon–Germanium Alloys

Abstract g ‐values, hyperfine splittings, and line widths of the EPR‐spectra of phosphorus substituted into Si 1− x Ge x alloys were investigated at 9.3 GHz and 1.8 K in the range 1 ≧ (1 — x ) ≧ 0.84 with phosphorus concentrations between 5 × 10 15 and 10 19 cm −3 . The peculiar variation of the measured quantities with the silicon concentration is discussed with regard to band structure investigations and to the individual surroundings of each phosphorus atom.