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We have investigated the interaction of fluorocarbon free radicals generated by infrared multiple-photon dissociation of C2F6 with Si(111)7×7 surfaces. X-ray photoelectron spectroscopy of F(1s) and C(1s) core levels is used to monitor the surface reactions. C2F6 does not chemisorb on these surfaces, even when vibrationally excited by CO2 laser pumping. CF3 radicals are strongly chemisorbed and undergo partial dissociation on a clean silicon surface. This chemisorption process is partially blocked by adsorbed adventitious carbon.
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Roop et al. (1985) studied this question.
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