We have shown the feasibility of forming insulating walls in Ga1−xAlxAs by proton bombardment, and have demonstrated their stability up to a temperature of 180°C. The mean projected range of protons in Ga1−xAlxAs is determined for energies ranging from 200 to 1200 keV. The insulating properties of proton-bombarded layers are applied to the realization of cross-bar integrated arrays of electroluminescent diodes.
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Favennec et al. (1973) studied this question.
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