Electron-beam induced initial growth of platinum films using Pt(PF3)4

Using an organometallic precursor, tetrakis(trifluorophosphine)platinum [Pt(PF3)4], electron-beam induced deposition of Pt thin films on a Cr-coated Si(100) substrate was investigated. Based on Auger electron spectroscopy, the Pt content reached 60 at. % for a 3 kV e-beam flux of 2.1×10−2 A cm−2, a precursor pressure of 2×10−5 Torr, and a substrate temperature of 80 °C. As the flux ratio (e-beam/precursor) increased above the optimized value of 10, the rate shifted from control by the e-beam flux to the precursor flux. The phosphorus content was reduced by adding O2.