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A new method, called the injection type IPOS, which consists of anodization of a n -type layer by injection of holes from a p -type substrate and oxidation, is reported. Formation of porous silicon film, anode potential-current characteristics and problems in application to integrated circuit were investigated. As a result, characteristics in anodization and oxidation peculiar to the injection type IPOS scheme were found. Satisfactory results about the isolation characteristic make it clear that this scheme can be applied to isolation in integrated circuit.
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Unagami et al. (1977) studied this question.
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