The influence of the dielectric relaxation on the current flow in high-ohmic semiconducting diodes

From numerical calculations of current–voltage characteristics and concentration profiles for a two side bounded semiconductor with an injecting contact the following conclusions are drawn: 1. In the relaxation case, where the dielectric relaxation time τd is much larger than the recombination lifetime τo, “recombinative space charge injection” from rectifying contacts and the formation of “depletion drift regions” do not occur. 2. The current-voltage forward characteristics are superlinear for any ration of τd/τo 3. The approximation np = n2i for the relaxation regime and some boundary conditions used in the literature are of limited applicability.