Self-rectifying resistive-switching characteristics with ultralow operating currents in SiOxNy/AlN bilayer devices

We propose a SiOxNy/AlN bilayer resistive switching random access memory scheme to eliminate crosstalk in a crossbar array structure. We demonstrated forming-free self-rectifying behaviors at an ultralow operating current (below 200 nA) by optimizing the current compliance and operating voltage. The set and reset voltages were reduced using a thin AlN layer, and the voltages' on/off ratio and rectifying ratio were as high as 80 and 102, respectively. In addition, the device showed an endurance of 103 dc cycles and a retention time over 105 s.