Parallel conductivity of random GaAs/AlGaAs superlattices in regime of controlled vertical disorder

The transport properties of intentionally disordered short-period doped GaAs/AlGaAs superlattices were explored. We found that a redistribution of the electron density in a random potential significantly influences the electron properties of the disordered superlattices resulting in a suppression of the vertical disorder and in the increase of the in-plane mobility of the layers with increasing disorder.