We have investigated the structural properties of as-grown and annealed (750 and 800 °C) digital alloy InGaAlAs (λ=1.3 μm) laser structures by cross-sectional scanning-tunneling microscopy. We show that it is possible to resolve the digital alloy period in the as-grown sample and the 750 °C annealed sample. The 800 °C annealed sample did not show the digital alloy period because of intermixing of the digital alloy. The 750 °C annealed sample showed only slight intermixing. The barrier/well interface roughness for the as-grown and the 750 °C annealed samples was the same. Annealing at 800 °C showed large barrier/well interface roughness and lateral composition modulation due to the phase separation of InGaAs/InAlAs alloys.
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Offermans et al. (2003) studied this question.
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