Temperature-dependent measurement of Auger recombination in self-organized In0.4Ga0.6As/GaAs quantum dots

We report experimental studies of temperature-dependent Auger recombination coefficients in self-assembled quantum dots. The results are based on a study of temperature-dependent large signal modulation experiments made on self-organized In0.4Ga0.6As/GaAs quantum dot lasers. The Auger coefficient decreases from ∼8×10−29 cm6/s at 100 K to ∼4×10−29 cm6/s at 300 K. This behavior, which is different from results in other higher-dimensional systems, is explained in terms of the temperature dependence of electron-hole scattering in the dots and contribution from higher lying states in the dot and adjoining layers.