Correlated Effects on Forming and Retention of Al Doping in HfO₂-Based RRAM

Correlated Effects on Forming and Retention of Al Doping in HfO2-Based RRAM Alayan, Mouhamad; Vianello, Elisa; De Salvo, Barbara; Perniola, Luca; Padovani, Andrea ; Larcher, Luca 2017 Abstract Editor's note: Retention time is one of the key parameters of emerging memories, which define the time duration the data can be retained when the power supply is removed. In this work, the authors investigate the forming voltage and the data retention of aluminum (Al)-doped HfO2-based RRAM devices and suggest a way to improve the device's data retention time. - - Yiran Chen, Duke University