Charge-pumping spectroscopy with pulsed interface probing

A hybrid technique based on charge pumping and pulsed interface probing is proposed for the spectroscopic characterization of interface traps in MOS devices. The technique allows uninterrupted scanning of bandgap and provides an accurate mean value for the capture cross section. Furthermore, the distribution of the capture cross section can be experimentally characterized, and a number of potentially distorting effects associated with the original charge-pumping technique can be eliminated by using the proposed technique. The model developed for interface dynamics qualitatively specifies the upper and lower limits of the scannable energy range and also reveals the limited resolution of charge-pumping techniques. It also shows how the range and resolution are affected by the distribution of the trap time constant.>