The decay of excess carriers induced in a semiconductor sample by a laser pulse is studied. The decay rate is proved to be independent of the spatial dependence of the hole-electron generation rate provoked by the laser beam. The effect of surface recombination can be minimized by waiting until the response drops to about 1% of its initial value. The accuracy of photoluminescence decay measurements of Auger lifetime is examined in view of this and other criteria developed here.
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Μισιακός et al. (1985) studied this question.
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