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December 1, 1980Japanese Journal of Applied Physics

Low Threshold Current CW Operation of InP/GaInAs Buried Heterostrueture Lasers

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Authors

YNYoshio NoguchiKagoshima UniversityKTKenichiro TakaheiRitsumeikan UniversityYSYoshio SuzukiTokyo Institute of Technology

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Noguchi et al. (1980) studied this question.

synapsesocial.com/papers/6a723662a2d7cf2e39c2ea5ahttps://doi.org/10.1143/jjap.19.l759
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Also Consider

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  1. 1Room-temperature c.w. operation of InP/InGaAsP/InP double heterostructure diode lasers emitting at 1.55 μm1979 · 41 citations
  2. 2Ultimate low-loss single-mode fibre at 1.55 μm1979 · 657 citations