Raman-spectra measurements were made on semi-insulating (SI) GaAs heat-treated in an atmosphere of H2 or Ar to study the effect of structural changes or strains on a thermal conversion of Si GaAs. Correlations between Raman spectra and electrical changes of SI GaAs indicate that strains in the interface region between SI GaAs and a dielectric film is, at least, one of the origins of the thermal conversion, while the structural changes accompanying the generation of the TO-phonon line has no effect on the thermal conversion.
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Nakamura et al. (1981) studied this question.
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