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We calculate the charge pumping current of a metal-oxide-semiconductor transistor in the time domain utilizing a transient two-dimensional device simulation. The dynamics of the interface states are included in the solution of the time-dependent problem with full self-consistency. The calculated charge pumping curve is in good agreement with the experiment, especially the rise and fall patterns of the signal, which are very sensitive to the source/drain profiles in small devices. The extraction of the density of states shows the range of validity of the analytical models and their restrictions. The influence of hot-carrier stress on the charge pumping signal, which relates to inhomogeneous spatial distribution of interface states and fixed oxide charges, is also discussed in experiment and simulation.
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Hofmann et al. (1989) studied this question.
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