Variation of lateral doping as a field terminator for high-voltage power devices

In this brief a new concept for high-voltage planar junctions is presented. The necessary widening of the space-charge region at the junction surface is obtained by implantation through small openings in the oxide mask and subsequent drive-in, leading to a controlled smeared-out dopant distribution. Compared to other planar junctions, this concept also yields a gain in active chip area. Experimental results show the validity of the concept.