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Electroluminescent devices with poly(methylphenylsilane) film doped with Eu3+ complexes were fabricated. The cell structure of glass substrate/indium-tin-oxide/polysilane/electron transport layer/Mg/Ag was employed. Sharp red electroluminescence of europium ion was obtained at dc bias voltage of over 12 V.
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Kido et al. (1991) studied this question.
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