An InP/InGaAsP/InGaAs avalanche photodiode with an effective guard-ring structure has been successfully fabricated. The diode has a planar structure with an n-InP layer buried by n−-InP in the multiplication region The structure has been grown on a (111)A-oriented InP substrate by two-step growth of liquid-phase epitaxy. Prior to the second growth of n−-InP a meltback technique was used to reduce dark current.
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Kishi et al. (1984) studied this question.
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