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High-voltage 4 H -SiC bipolar devices, including rectifier diodes, bipolar junction transistors, and thyristors are discussed. The results of experimental and theoretical studies of the steady-state and transient characteristics of these devices are presented. Specific features of device operation, related to the specific electronic properties of silicon carbide and SiC-based p-n structures, are analyzed.
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Ivanov et al. (2005) studied this question.
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