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April 1, 2008Japanese Journal of Applied Physics

Quantitative Characterization of Plasma-Induced Defect Generation Process in Exposed Thin Si Surface Layers

Koji Eriguchi Akira Ohno Daisuke Hamada Masayuki Kamei Hiroshi Fukumoto Kouichi Ono

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Abstract

Quantitative Characterization of Plasma-Induced Defect Generation Process in Exposed Thin Si Surface Layers, Eriguchi, Koji, Ohno, Akira, Hamada, Daisuke, Kamei, Masayuki, Fukumoto, Hiroshi, Ono, Kouichi

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Cite This Study

Eriguchi et al. (2008) studied this question.

synapsesocial.com/papers/6a726545e5469ee92be264c1 https://doi.org/10.1143/jjap.47.2446

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