Low-frequency noise in GaAs m.e.s.f.e.t.s has been measured from 2 kHz to 1.5 MHz as a function of fast neutron fluence and gamma dose. From 5 × 1013 to 8 × 1014 n/cm2, the noise increases appreciably, with the noise enhancement from 2 to 10 kHz attributed to generation-recombination noise in the gate depletion layer and from 500 kHz to 1.5 MHz to channel trapping effects. There was comparably little change with gamma irradiation up to doses above 107 rad (Si).
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Moghe et al. (1978) studied this question.